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APTC60TDUM35PG
Triple dual Common Source
Super Junction MOSFET
Power Module
D1 D3 D5 G1 G3 G5
VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
S1 S1/S2
S3 S3/S 4
S5 S5/ S6
S2 G2
S4 G4
S6 G6
Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration
D2
D4
D6
* * *
D1 D3 D5
G1 S1/S2 S1 S2 G2 S3/S4
G3 S3 S4 G4 S5/S6
G5 S5 S6 G6
D2
D4
D6
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 600 72 54 200 20 35 416 20 1 1800 Unit V A V m W A mJ
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60TDUM35P G- Rev 1
July, 2006
APTC60TDUM35PG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = 20 V, VDS = 0V
3
Max 40 375 35 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 72A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5
Min
Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412
Max
Unit nF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ 72 54
Max
Unit A
VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/s Tj = 25C Tj = 25C 580 46
1.2 6
V V/ns ns C
July, 2006 2-6 APTC60TDUM35P G- Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 72A di/dt 200A/s VR VDSS Tj 150C
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APTC60TDUM35PG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3
Typ
Max 0.3 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTC60TDUM35P G- Rev 1
July, 2006
APTC60TDUM35PG
Typical Performance Curve
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280
V GS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V
Transfert Characteristics 240 200 160 120 80 40 0 0
T J=125C TJ=25C T J=-55C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
I D, Drain Current (A)
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) I D, DC Drain Current (A)
Normalized to VGS=10V @ 36A VGS=10V
DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25
July, 2006 4-6 APTC60TDUM35P G- Rev 1
VGS =20V
50 75 100 125 TC, Case Temperature (C)
150
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APTC60TDUM35PG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 72A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000 Ciss
C, Capacitance (pF)
14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
July, 2006
10000
ID=72A TJ=25C
V DS=120V VDS=300V V DS =480V
Coss
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTC60TDUM35P G- Rev 1
APTC60TDUM35PG
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=2.5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
Switching Energy (mJ)
VDS=400V RG=2.5 TJ=125C L=100H td(on) VDS=400V RG=2.5 TJ=125C L=100H
tf
80 60 40 20 0 0
tr
20
40
60
80
100
120
ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 2 0
VDS=400V ID=72A T J=125C L=100H
Switching Energy (mJ)
Eoff Eon
Eoff
Eon
20
40 60 80 100 ID, Drain Current (A)
120
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
T J=150C
Operating Frequency vs Drain Current 140 120
Frequency (kHz)
ZCS ZVS
100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A)
VDS=400V D=50% RG=2.5 TJ=125C TC=75C
I DR, Reverse Drain Current (A)
100
TJ=25C
10
hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006 APTC60TDUM35P G- Rev 1
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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